파트넘버.co.kr RFL1N18 데이터시트 PDF


RFL1N18 반도체 회로 부품 판매점

1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs



Intersil Corporation 로고
Intersil Corporation
RFL1N18 데이터시트, 핀배열, 회로
Semiconductor
January 1998
Features
• 1A, 180V and 200V
• rDS(ON) = 3.65
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1N18
TO-205AF
RFL1N18
RFL1N20
TO-205AF
RFL1N20
NOTE: When ordering, use the entire part number.
RFL1N18,
RFL1N20
1A, 180V and 200V, 3.65 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09289.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 1442.2


RFL1N18 데이터시트, 핀배열, 회로
RFL1N18, RFL1N20
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 1M) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFL1N18
180
180
1
5
±20
8.33
0.0667
-55 to 150
300
260
RFL1N20
200
200
1
5
±20
8.33
0.0667
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
RFL1N18
BVDSS ID = 250µA, VGS = 0V
180 - - V
RFL1N20
200 - - V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA, (Figure 8)
VDS = 0.8 x Rated
BVDSS
TC = 25oC
TC = 125oC
VGS = ±20V, VDS = 0V
ID = 1A, VGS = 10V
ID = 2A, VGS = 10V
ID = 1A, VGS = 10V, (Figures 6, 7)
ID = 1A, VDS = 10V, (Figure 10)
ID 1A, VDD = 100V RGS = 50,
VGS = 10V, (Figures 11, 12, 13)
VGS = 0V, VDS = 25V, f = 1MHz,
(Figure 9)
2- 4 V
--
1 µA
- - 25 µA
-
-
±100
nA
- - 3.65 V
- - 8.3 V
- - 3.65
400 - - S
- 15 25
ns
- 20 30
ns
- 25 40
ns
- 30 50
ns
- - 200 pF
- - 60 pF
- - 25 pF
- - 15 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 1A
Diode Reverse Recovery Time
trr ISD = 2A, dISD/dt = 50A/µs
NOTE:
2. Pulse test: pulse width 300µs maximum, duty cycle 2%.
MIN TYP MAX UNITS
- - 1.4 V
- 200 -
ns
5-2




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: Intersil Corporation

( intersil )

RFL1N18 mosfet

데이터시트 다운로드
:

[ RFL1N18.PDF ]

[ RFL1N18 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


RFL1N10

1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs - Intersil Corporation



RFL1N10

1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS - New Jersey Semiconductor



RFL1N10L

1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET - Intersil Corporation



RFL1N10L

1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS - New Jersey Semiconductor



RFL1N12

1A/ 120V and 150V/ 1.9 Ohm/ N-Channel Power MOSFETs - Intersil Corporation



RFL1N12

1A 120V AND 150V 1.9 OHM N-CHANNEL POWER MOSFETS - New Jersey Semiconductor



RFL1N12L

1A/ 120V and 150V/ 1.900 Ohm/ Logic Level/ N-Channel Power MOSFETs - Intersil Corporation



RFL1N12L

Trans MOSFET N-CH 120V 1A 3-Pin TO-205AF - New Jersey Semiconductor



RFL1N15

1A/ 120V and 150V/ 1.9 Ohm/ N-Channel Power MOSFETs - Intersil Corporation