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Intersil Corporation |
Data Sheet
RFK25N18, RFK25N20
October 1998
File Number 1500.3
25A, 180V and 200V, 0.150 Ohm,
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09594.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFK25N18
TO-204AE
RFK25N18
RFK25N20
TO-204AE
RFK25N20
NOTE: When ordering, use the entire part number.
Features
• 25A, 180V and 200V
• rDS(ON) = 0.150Ω
Symbol
G
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
D
S
GATE (PIN 1)
SOURCE (PIN 2)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
RFK25N18, RFK25N20
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFK25N18
RFK25N20
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
180
200
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR
180
200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
25
25
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
60
60
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
1.2
150 W
1.2 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL
260
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
RFK25N18
SYMBOL
TEST CONDITIONS
BVDSS ID = 250µA, VGS = 0
MIN
180
RFK25N20
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VGS = ±20V, VDS = 0V
ID = 25A, VGS = 10V (Figures 6, 7)
ID = 25A, VGS = 10V
ID ≈ 12.5A, VDD = 100V, RG = 50 , VGS = 10V
RL = 8 ,
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V
f = 1MHz
(Figure 9)
200
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Source to Drain Diode Specifications
TYP MAX UNITS
--V
--V
-4V
- 1 µA
- 25 µA
- ±100 nA
- 0.150 Ω
- 3.75 V
40 80
ns
150 225 ns
300 400 ns
120 200 ns
- 3500 pF
- 900 pF
- 400 pF
- 0.83 oC/W
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 12.5A
Diode Reverse Recovery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.4 V
- 300 -
ns
2
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