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Número de pieza | RFG75N05E | |
Descripción | 75A/ 50V/ 0.008 Ohm/ N-Channel Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RFG75N05E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Data Sheet
RFG75N05E
July 1999 File Number 2275.5
75A, 50V, 0.008 Ohm, N-Channel Power
MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA09821.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG75N05E
TO-247
RFG75N05E
NOTE: When ordering, include the entire part number.
Features
• 75A, 50V
• rDS(ON) = 0.008Ω
• Electrostatic Discharge Rated
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Temperature Compensated PSPICE® Model Provided
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
4-481
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page Test Circuits and Waveforms
RFG75N05E
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
VDS
VGS
VGS
RGS
RL
DUT
+
VDD
-
FIGURE 14. SWITCHING TIME TEST CIRCUIT
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
4-485
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0
Ig(REF)
0
Qg(10)
Qg(TH)
VGS = 10V
VGS = 20V
FIGURE 17. GATE CHARGE WAVEFORM
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RFG75N05E.PDF ] |
Número de pieza | Descripción | Fabricantes |
RFG75N05E | 75A/ 50V/ 0.008 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
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