RFD16N06LESM 반도체 회로 부품 판매점
16A/ 60V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs
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 Fairchild Semiconductor |
Data Sheet
RFD16N06LESM
September 2002
16A, 60V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
a modern process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
relay drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V to 5V range, thereby facilitating true on-off power
control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49027.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD16N06LESM* TO-252AA
16N06LE
NOTE: When ordering, use the entire part number. Add suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e.,
RFD16N06LESM9A.
*RFD16N06LESM is only availabe in tape and reel.
Features
• 16A, 60V
• rDS(ON) = 0.047Ω
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
RFD16N06LESM Rev. B1
RFD16N06LESM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFD16N06LESM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
60
60
+10, -8
16
Refer to Peak Current Curve
Refer to UIS Curve
90
0.606
-55 to 175
300
260
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
ID = 250µA, VGS = 0V, Figure 11
VGS = VDS, ID = 250µA, Figure 10
VDS = 55V, VGS = 0V
VDS = 50V, VGS = 0V, TC = 150oC
VGS = +10, -8V
ID = 16A, VGS = 5V
VDD = 30V, ID = 16A, RL = 1.88Ω,
VGS = 5V, RGS = 5Ω
Figures 16, 17
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 48V,
ID = 16A, RL = 3Ω
Figures 18, 19
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CISS
COSS
CRSS
RθJC
RθJA
VDS = 25V, VGS = 0V,
f = 1MHz
Figure 12
TO-251AA, TO-252AA
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 16A
Diode Reverse Recovery Time
trr ISD = 16A, dISD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature.
MIN TYP MAX UNITS
60 -
-
V
1-3
V
- - 1 µA
- - 250 µA
- - 10 µA
-
- 0.047
Ω
- - 100 ns
- 11 -
ns
- 60 -
ns
- 48 -
ns
- 35 -
ns
- - 115 ns
- 51 62 nC
- 29 35 nC
-
1.8 2.6
nC
- 1350 -
pF
- 300 -
pF
- 90 -
pF
-
-
1.65
oC/W
- - 80 oC/W
MIN TYP MAX UNITS
- - 1.5 V
- - 125 ns
©2002 Fairchild Semiconductor Corporation
RFD16N06LESM Rev. B1
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RFD16N06LESM mosfet
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관련 데이터시트
RFD16N06LESM
16A/ 60V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs - Fairchild Semiconductor
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