PDF RFD16N05SM Data sheet ( Hoja de datos )

Número de pieza	RFD16N05SM
Descripción	16A/ 50V/ 0.047 Ohm/ N-Channel Power MOSFETs
Fabricantes	Fairchild Semiconductor
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No Preview Available ! Data Sheet RFD16N05, RFD16N05SM January 2002 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. Ordering Information PART NUMBER PACKAGE BRAND RFD16N05 TO-251AA F16N05 RFD16N05SM TO-252AA F16N05 NOTE: When ordering, use the entire part number. Add the sufﬁx 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A. Packaging JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE Features • 16A, 50V • rDS(ON) = 0.047Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE ©2002 Fairchild Semiconductor Corporation RFD16N05, RFD16N05SM Rev. B 1 page RFD16N05, RFD16N05SM Typical Performance Curves Unless Otherwise Speciﬁed (Continued) 1600 1200 800 400 0 0 CISS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS COSS CRSS 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 50 37.5 VDD = BVDSS VDD = BVDSS 10 7.5 25 12.5 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS RL = 3.125Ω IG(REF) = 0.8mA VGS = 10V 0 20 I-I-G-G-----((--AR-----CE----FT----)-) t, TIME (ms) 80 -II-GG-----((--AR----CE----FT----)) 5 2.5 0 NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VARY tP TO OBTAIN REQUIRED PEAK IAS VGS tP 0V RG VDS L DUT + VDD - IAS 0.01Ω FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT tP IAS BVDSS VDS VDD 0 tAV FIGURE 15. UNCLAMPED ENERGY WAVEFORMS VDS VGS RGS RL DUT + VDD - VGS FIGURE 16. SWITCHING TIME TEST CIRCUIT VDS tON td(ON) tr 90% tOFF td(OFF) tf 90% 10% 0 VGS 10% 0 50% PULSE WIDTH 10% 90% 50% FIGURE 17. RESISTIVE SWITCHING WAVEFORMS ©2002 Fairchild Semiconductor Corporation RFD16N05, RFD16N05SM Rev. B 5 Page

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