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PDF RFD16N02 Data sheet ( Hoja de datos )
| Número de pieza | RFD16N02 | |
| Descripción | 16A/ 20V/ 0.022 Ohm/ N-Channel/ Logic Level/ Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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May 1997
RFD16N02L,
RFD16N02LSM
16A, 20V, 0.022 Ohm, N-Channel,
Logic Level, Power MOSFET
Features
• 16A, 20V
• rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS,
and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Description
The RFD16N02L and RFD16N02LSM are N-Channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as switching regulators, switching convert-
ers, motor drivers and relay drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate bias in the 3V to 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD16N02L
TO-251AA
16N02L
RFD16N02LSM
TO-252AA
16N02L
NOTE: When ordering, use the entire part number. Add the suffix
9A, to obtain the TO-252AA variant in tape and reel, e.g.
RFD16N02LSM9A.
Formerly developmental type TA49243.
Symbol
D
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 4341
1 page  
RFD16N02L, RFD16N02LSM
Typical Performance Curves (Continued)
2.0 VGS = VDS, ID = 250µA
2.0
ID = 250µA
1.5 1.5
1.0 1.0
0.5 0.5
0
-80 -40
0
40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0
-80 -40
0
40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2500
2000
VGS = 0V, f = 1MHz
1500
1000
500
CISS
COSS
CRSS
0
0 5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
20
VDD = BVDSS
VDD = BVDSS
5
15 3.75
RL = 1.25Ω
IG(REF) = 0.55mA
VGS = 5V
10 PLATEAU VOLTAGES IN 2.5
DESCENDING ORDER:
VDD = BVDSS
5 VDD = 0.75 BVDSS 1.25
VDD = 0.50 BVDSS
VDD = 0.25 BVDSS
0
20 I-I-GG-----((--AR----CE----FT----))
t, TIME (µs) 80 I-I-GG-----((--AR----CE----FT----))
0
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RFD16N02.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RFD16N02 | 16A/ 20V/ 0.022 Ohm/ N-Channel/ Logic Level/ Power MOSFET | Intersil Corporation |
| RFD16N02L | 16A/ 20V/ 0.022 Ohm/ N-Channel/ Logic Level/ Power MOSFET | Intersil Corporation |
| RFD16N02LSM | 16A/ 20V/ 0.022 Ohm/ N-Channel/ Logic Level/ Power MOSFET | Intersil Corporation |
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