RFD14N05L 판매점 - 14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs

RFD14N05L 반도체 회로 부품 판매점

14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs

Intersil Corporation

RFD14N05L, RFD14N05LSM, RFP14N05L

Data Sheet

April 1999 File Number 2246.3

14A, 50V, 0.100 Ohm, Logic Level,

N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits, gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers and relay drivers. This performance is accomplished

through a special gate oxide design which provides full rated

conductance at gate bias in the 3V-5V range, thereby

facilitating true on-off power control directly from logic level

(5V) integrated circuits.

Formerly developmental type TA09870.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFD14N05L

TO-251AA

14N05L

RFD14N05LSM

TO-252AA

14N05L

RFP14N05L

TO-220AB

FP14N05L

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05LSM9A.

Features

• 14A, 50V

• rDS(ON) = 0.100Ω

• Temperature Compensating PSPICE™ Model

• Can be Driven Directly from CMOS, NMOS, and

TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175oC Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-251AA

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

JEDEC TO-220AB

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

6-135

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a trademark of MicroSim Corporation.

RFD14N05L, RFD14N05LSM, RFP14N05L

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

RFD14N05L, RFD14N05LSM,

RFP14N05L

± 10

Refer to Peak Current Curve

Refer to UIS Curve

0.32

-55 to 175

300

260

UNITS

W/oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Drain to Source Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

Drain to Source On Resistance (Note 2)

Turn-On Time

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-Off Time

Total Gate Charge

Gate Charge at 5V

Threshold Gate Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

BVDSS

VGS(TH)

IDSS

IGSS

rDS(ON)

t(ON)

td(ON)

td(OFF)

t(OFF)

Qg(TOT)

Qg(5)

Qg(TH)

CISS

COSS

CRSS

RθJC

RθJA

ID = 250µA, VGS = 0V, Figure 13

VGS = VDS, ID = 250µA, Figure12

VDS = 40V, VGS = 0V

VDS = 40V, VGS = 0V, TC = 150oC

VGS = ±10V

ID = 14A, VGS = 5V, Figures 9, 11

VDD = 25V, ID = 7A,

RL = 3.57Ω, VGS = 5V,

RGS = 0.6Ω

VGS = 0V to 10V

VGS = 0V to 5V

VGS = 0V to 1V

VDD = 40V, ID = 14A,

RL = 2.86Ω

Figures 20, 21

VDS = 25V, VGS = 0V, f = 1MHz

Figure 14

TO-251 and TO-252

TO-220

Source to Drain Diode Speciﬁcations

TYP

670

185

MAX

±100

0.100

100

1.5

3.125

100

UNITS

µA

Ω

oC/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2)

VSD ISD = 14A

- - 1.5 V

Diode Reverse Recovery Time

trr ISD = 14A, dISD/dt = 100A/µs

- - 125 ns

NOTES:

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current

Capability Curve (Figure 5).

6-136

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제조업체: Intersil Corporation

( intersil )

RFD14N05L mosfet

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RFD14N05L 반도체 회로 부품 판매점

14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs

국내 전력반도체 판매점

일반적인 전자부품 판매점

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