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RF3S49092SM 반도체 회로 부품 판매점

20A/10A/ 12V/ 0.060/0.140 Ohm/ Logic Level/ Complementary Power MOSFET



Intersil Corporation 로고
Intersil Corporation
RF3S49092SM 데이터시트, 핀배열, 회로
Data Sheet
RF3V49092, RF3S49092SM
November 1999
File Number 4600.1
20A/10A, 12V, 0.060/0.140 Ohm, Logic
Level, Complementary Power MOSFET
These complementary power MOSFETs are manufactured
using an advanced MegaFET process. This process, which
uses feature sizes approaching those of LSI integrated
circuits, gives optimum utilization of silicon, resulting in
outstanding performance. It is designed for use in
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This product achieves full rated conduction at a
gate bias in the 3V to 5V range, thereby facilitating true
on-off power control directly from logic level (5V) integrated
circuits.
Formerly developmental type TA49092.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF3V49092
TS-001AA
F3V4909 2
RF3S49092SM
MO-169AB
F3S49092
NOTE: When ordering, use the entire part number. For ordering the
MO-169AB in tape and reel, add the suffix 9A to the part number, i.e.,
RF3S49092SM9A.
Features
• 20A, 12V (N-Channel)
10A, 12V (P-Channel)
• rDS(ON) = 0.060(N-Channel)
rDS(ON) = 0.140(P-Channel)
• Temperature Compensating PSPICE® Model
• On-Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Symbol
S2
G2
D1
G1
S1
Packaging
JEDEC TS-001AA (ALTERNATE)
S1
G1DS2
G2
JEDEC MO-169AB
G2
S2DG1
S1
4-30
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-727-9207 | Copyright © Intersil Corporation 1999


RF3S49092SM 데이터시트, 핀배열, 회로
RF3V49092, RF3S49092SM
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified
N-CHANNEL
P-CHANNEL
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . VDSS
12
-12 V
Drain to Gate Voltage (RGS = 20k, Note 1) . . . . . . . . .VDGR
12
-12 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±10
±10 V
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed (Figures 5, 26) . . . . . . . . . . . . . . . . . . . . . . . . . IDM
20
Refer to Peak Current Curve
10
Refer to Peak Current Curve
A
Pulsed Avalanche Rating (Figures 6, 27). . . . . . . . . . . . . EAS
Refer to UIS Curve
Refer to UIS Curve
Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50
0.33
50 W
0.33
W/oC
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
-55 to 175
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . .Tpkg
300
260
300 oC
260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications (N-Channel) TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
TEST CONDITIONS
ID = 250µA, VGS = 0V, (Figure 13)
VGS = VDS, ID = 250µA, (Figure 12)
VDS = 12V,
VGS = 0V
TC = 25oC
TC = 150oC
VGS = ±10V
ID = 20A, VGS = 5V, (Figure 9, 11)
VDD = 6V, ID 20A, RL = 0.24,
VGS = 5V, RGS = 25
(Figure 10)
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 9.6V,
ID = 20A,
RL = 0.42
(Figure 15)
VDS = 10V, VGS = 0V, f = 1MHz
(Figure 14)
TS-001AA, and MO-169AB
MIN TYP MAX UNITS
12 - - V
1- -V
- - 1 µA
- - 50 µA
-
-
±100
nA
-
-
0.060
- - 100 ns
- 18 - ns
- 60 - ns
- 50 - ns
- 60 - ns
- - 140 ns
- 20 25 nC
- 12 15 nC
- 0.9 1.2 nC
- 750 -
pF
- 700 -
pF
- 275 -
pF
-
-
3.00
oC/W
- - 62 oC/W
N-Channel Source to Drain Diode Specifications
PARAMETER
Source to Drain Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD
trr
ISD = 20A
ISD = 20A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
- - 1.5 V
- - 100 ns
4-31




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RF3S49092SM mosfet

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