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PDF RF3808S Data sheet ( Hoja de datos )
| Número de pieza | RF3808S | |
| Descripción | Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 94338A
IRF3808S
AUTOMOTIVE MOSFET
Typical Applications
q Integrated Starter Alternator
q 42 Volts Automotive Electrical Systems
Benefits
q Advanced Process Technology
q Ultra Low On-Resistance
q Dynamic dv/dt Rating
q 175°C Operating Temperature
q Fast Switching
q Repetitive Avalanche Allowed up to Tjmax
G
IRF3808L
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 0.007Ω
ID = 106AV
S
Description
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET ® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this HEXFET power MOSFET
are a 175°C junction operating temperature, low RθJC, fast switch-
ing speed and improved repetitive avalanche rating. This combina-
tion makes the design an extremely efficient and reliable choice for
use in higher power Automotive electronic systems and a wide
variety of other applications.
D2Pak
IRF3808S
TO-262
IRF3808L
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
106V
75V
550
200
1.3
± 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted, Steady State)**
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
03/08/02
1 page  
IRF3808S/IRF3808L
120
LIMITED BY PACKAGE
100
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature
( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page 
IRF3808S/IRF3808L
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
F E E D D IR E C T IO N 1.85 (.0 73)
1.65 (.0 65)
TRL
10 .9 0 (.4 29 )
10 .7 0 (.4 21 )
1.60 (.0 6 3)
1.50 (.0 5 9)
11 .6 0 (.4 57 )
11 .4 0 (.4 49 )
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16 .10 (.63 4)
15 .90 (.62 6)
0 .3 68 (.014 5)
0 .3 42 (.013 5)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FE ED D IR E C TIO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.1 73)
MAX.
60.00 (2.362)
M IN .
NOTES :
1. C O M F O R M S TO EIA-418.
2. C O N TR O LLIN G D IM EN SIO N : M ILLIM ET ER .
3. D IM E NS IO N M E A SU R ED @ HU B .
4. IN C LU D E S FLA N G E D IST O R T IO N @ O U TE R E D G E .
26 .40 (1.039)
24 .40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/02
www.irf.com
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet RF3808S.PDF ] | |
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