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Vishay Siliconix |
New Product
P-Channel 60-V (D-S) MOSFET
TP0610K
Vishay Siliconix
PRODUCT SUMMARY
V(BR)DSS(min) (V)
–60
rDS(on) (W)
6 @ VGS = –10 V
VGS(th) (V)
–1 to –3.0
ID (mA)
–185
FEATURES
BENEFITS
APPLICATIONS
D High-Side Switching
D Low On-Resistance: 6 Ω
D Low Threshold: –2 V (typ)
D Fast Swtiching Speed: 20 ns (typ)
D Low Input Capacitance: 20 pF (typ)
D Gate-Source ESD Protection
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Easily Driven Without Buffer
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Power Supply Converter Circuits
D Solid State Relays
TO-236
(SOT-23)
G1
S2
3D
Top View
Marking Code: 6Kwll
6K = Part Number Code for TP0610K
w = Week Code
ll = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulse Drain Currentb
Power Dissipationa
Maximum Junction-to-Ambienta
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 100_C
TA = 25_C
TA = 100_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
–60
"20
–185
–115
–800
350
140
350
–55 to 150
Notes
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71411
S-04279—Rev. C, 16-Jul-01
Unit
V
mA
mW
_C/W
_C
www.vishay.com
11-1
TP0610K
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = –10 µA
VDS = VGS, ID = –250 µA
VDS = 0 V, VGS = "20 V
VDS = 0 V, VGS = "10 V
VDS = 0 V, VGS = "10 V, TJ = 85_C
VDS = 0 V, VGS = "5 V
VDS = –50 V, VGS = 0 V
VDS = –50 V, VGS = 0 V, TJ = 85_C
VDS = –10 V, VGS = –4.5 V
VDS = –10 V, VGS = –10 V
VGS = –4.5 V, ID = –25 mA
VGS = –10 V, ID = –500 mA
VGS = –10 V, ID = –500 mA, TJ = 125_C
VDS = –10 V, ID = –100 mA
IS = –200 mA, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingb
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = –30 V, VGS = –15 V, ID ^ –500 mA
VDS = –25 V, VGS = 0 V, f = 1 MHz
Turn-On Time
Turn-Off Time
tON
tOFF
VDD = –25 V, RL = 150 W
ID ^ –200 mA, VGEN = –10 V
RG = 10 W
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Switching time is essentially independent of operating temperature.
Min Typ Max Unit
–60
–1
–50
–600
80
–3.0
"10
"200
"500
"100
–25
–250
10
6
9
–1.4
V
mA
nA
mA
W
mS
V
1.7
0.26
0.46
23
10
5
nC
pF
20
ns
35
TPJO60
www.vishay.com
11-2
Document Number: 71411
S-04279—Rev. C, 16-Jul-01
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