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Vishay Siliconix |
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
N-Channel 20-, 30-, 40-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
TN0201L
TN0401L
VN0300L
VN0300LS
V(BR)DSS Min (V)
20
40
30
30
rDS(on) Max (W)
1.2 @ VGS = 10 V
1.2 @ VGS = 10 V
1.2 @ VGS = 10 V
1.2 @ VGS = 10 V
VGS(th) (V)
0.5 to 2
0.5 to 2
0.8 to 2.5
0.8 to 2.5
ID (A)
0.64
0.64
0.64
0.67
FEATURES
D Low On-Resistance: 0.85 W
D Low Threshold: 1.4 V
D Low Input Capacitance: 38 pF
D Fast Switching Speed: 9 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-226AA
(TO-92)
S1
G2
D3
Top View
TN0201L
TN0401L
VN0300L
Device Marking
Front View
TN0201L
“S” TN
0201L
xxyy
TN0401L
“S” TN
0401L
xxyy
“S” = Siliconix Logo
xxyy = Date Code
VN0300L
“S” VN
0300L
xxyy
TO-92S
(Copper Lead Frame)
S1
G2
D3
Top View
VN0300LS
Device Marking
Front View
VN0300LS
“S” VN
0300LS
xxyy
“S” = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol TN0201L TN0401L VN0300L
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 100_C
Power Dissipation
Thermal Resistance, Junction-to-Ambient
TA= 25_C
TA= 100_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
20
"20
0.64
0.38
1.5
0.8
0.32
156
40 30
"20
"30
0.64
0.64
0.38
0.38
1.5 3
0.8 0.8
0.32
0.32
156 156
–55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
VN0300LS
30
"30
0.67
0.43
3
0.9
0.4
156
Unit
V
A
W
_C/W
_C
Document Number: 70199
S-04279—Rev. E, 16-Jul-01
www.vishay.com
11-1
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Typa
Limits
TN0201L
TN0401L
VN0300L
VN0300LS
Min Max Min Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Drain-Source On-Resistanceb
rDS(on)
Forward Transconductanceb
Dynamic
gfs
VGS = 0 V
ID = 10 mA
TN0201L
TN0401L
VDS = VGS, ID = 0.25 mA
VDS = VGS, ID = 1 mA
VDS = 0 V, VGS = "20 V
VDS = 0 V, VGS = "30 V
VDS = 30 V, VGS = 0 V
TJ = 125_C
VDS = 0.8 x V(BR)DSS, VGS = 0 V
TJ = 125_C
VDS = 10 V, VGS = 4.5 V
VDS = 10 V, VGS = 10 V
VGS = 3.5 V, ID = 0.05 A
VGS = 5 V, ID = 0.3 A
VGS = 4.5 V, ID = 0.25 A
TJ = 125_C
VGS = 10 V, ID = 1 A
TJ = 125_C
VDS = 10 V, ID = 0.5 A
55
55
1.4
1.5
0.9
3.5
1.8
1.2
1.4
2.6
0.85
1.6
500
20
40
0.5 2
"10
0.25
1
1
100
4
2
4
1.2
200
30 V
0.8 2.5
"100
10
500
nA
mA
A
1
3.3
W
1.2
2.4
200 mS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Ciss
Coss
Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
38
33
8
60 100
50 95 pF
15 25
Turn-On Time
Turn-Off Time
tON
tOFF
VDD = 15 V, RL = 14 W
10 30 30
ID ^ 1 A, VGEN = 10 V
ns
RG = 25 W
13 30 30
Notes
a. For DESIGN AID ONLY, not subject to production testing..
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
VNDQ03
www.vishay.com
11-2
Document Number: 70199
S-04279—Rev. E, 16-Jul-01
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