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PDF VQ3001P Data sheet ( Hoja de datos )
| Número de pieza | VQ3001P | |
| Descripción | Dual N-/Dual P-Channel 30-V (D-S) MOSFETs | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de VQ3001P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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VQ3001J/P
Vishay Siliconix
Dual N-/Dual P-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
N-Channel
P-Channel
V(BR)DSS Min (V)
30
–30
rDS(on) Max (W)
1 @ VGS = 12 V
2 @ VGS = –12 V
VGS(th) (V)
0.8 to 2.5
–2 to –4.5
ID (A)
0.85
–0.6
FEATURES
D Low On-Resistance: 0.8/1.6 W
D Low Threshold: 1.5/–3.1 V
D Low Input Capacitance: 38/60 pF
D Fast Switching Speed: 9/16 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
Dual-In-Line
D1 1
N S1 2
G1 3
NC 4
G2 5
P S2 6
D2 7
14 D4
13 S4
12 G4
11 NC
10 G3
9 S3
8 D3
P
N
Top View
Plastic: VQ3001J
Sidebraze: VQ3001P
Device Marking
Top View
VQ3001J
“S” fllxxyy
VQ3001P
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single
Parameter
Symbol
N-Channel P-Channel Total Quad
Drain-Source Voltage
Gate-Source Voltage
VQ3001J
VQ3001P
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 100_C
Power Dissipation
Thermal Resistance, Junction-to-Ambient
TA= 25_C
TA= 100_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
30
"20
"20
0.85
0.52
3
1.3
0.52
96.2
–55 to 150
30
"20
"20
–0.6
–0.37
–2
1.3 2
0.52
0.8
96.2
62.5
–55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
Unit
V
A
W
_C/W
_C
Document Number: 70221
S-04279—Rev. D, 16-Jul-01
www.vishay.com
11-1
1 page  
VQ3001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
P-CHANNEL
Output Characteristics
–2.0
VGS = –10 V
–9 V
–1.6
–8 V
–1.2
–7 V
–1000
–800
–600
Transfer Characteristics
TJ = –55_C
125_C
25_C
–0.8
–6 V
–400
–0.4
0
0
175
150
125
100
75
50
25
0
0
1.65
–5 V
–4 V
–1 –2 –3 –4
VDS – Drain-to-Source Voltage (V)
–5
Capacitance
VGS = 0 V
f = 1 MHz
Crss
Ciss
Coss
–5 –10 –15 –20 –25
VDS – Drain-to-Source Voltage (V)
–30
On-Resistance vs. Junction Temperature
1.50
1.35
1.20
1.05
VGS = –4.5 V
ID = –0.5 A
VGS = –10 V
ID = –0.1 A
0.90
0.75
–50 –25
0 25 50 75 100 125 150
TJ – Junction Temperature (_C)
Document Number: 70221
S-04279—Rev. D, 16-Jul-01
–200
0
0
–18
–2 –4 –6 –8
VGS – Gate-to-Source Voltage (V)
Gate Charge
–10
–15
VDS = –15 V
–12 ID = –1 A
VDS = –24 V
–9 ID = –1 A
–6
–3
0
0
1000
2000
3000
4000
5000
Qg – Total Gate Charge (pC)
–10 K
–1 K
Source-Drain Diode Forward Voltage
TJ = 150_C
TJ = 25_C
–100
–10
–1
0
–1.0
–2.0
–3.0
VSD – Source-to-Drain Voltage (V)
–4.0
www.vishay.com
11-5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet VQ3001P.PDF ] | |
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