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VN0605T 반도체 회로 부품 판매점

N-Channel 60-V (D-S) MOSFETs



Vishay Siliconix 로고
Vishay Siliconix
VN0605T 데이터시트, 핀배열, 회로
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VN10LLS
VN0605T
VN0610LL
VN2222LL
V(BR)DSS Min (V)
60
rDS(on) Max (W)
5 @ VGS = 10 V
5 @ VGS = 10 V
5 @ VGS = 10 V
5 @ VGS = 10 V
VGS(th) (V)
0.8 to 2.5
0.8 to 3.0
0.8 to 2.5
0.6 to 2.5
ID Min (A)
0.32
0.18
0.28
0.23
FEATURES
BENEFITS
D Low On-Resistance: 2.5 W
D Low Threshold: <2.1 V
D Low Input Capacitance: 22 pF
D Fast Switching Speed: 7 ns
D Low Input and Output
Leakage
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffering
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Solid State Relays
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
TO-226AA
(TO-92)
S1
G2
D3
Top View
VN0610LL
VN2222LL
Front View
VN0610LL
“S” VN0
610LL
xxyy
VN2222LL
“S” VN2
222LL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
TO-92S
S1
G2
D3
Top View
VN10LLS
Front View
VN10LLS
“S” VN
10LLS
xxyy
“S” = Siliconix Logo
xxyy = Date Code
TO-236
(SOT-23)
VN0605T
G1
S2
3D
V2wll
Top View
VN0605T
V2 = Part Number Code
for VN0605T
w = Week Code
ll = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol VN10LLS VN0605T VN0610LL
Drain-Source Voltage
Gate-Source Voltage—Non-Repetitiveb
Gate-Source Voltage—Continuous
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 100_C
Power Dissipation
TA= 25_C
TA= 100_C
Thermal Resistance, Junction-to-Ambient
Operating Junction and
Storage Temperature Range
VDS
VGSM
VGS
ID
IDM
PD
RthJA
TJ, Tstg
60
"30
"20
0.32
0.2
1.4
0.9
0.4
139
60
"30
"20
0.18
0.11
0.72
0.36
0.14
350
60
"30
"20
0.28
0.17
1.3
0.8
0.32
156
–55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
b. tp v 50 ms.
Document Number: 70212
S-04279—Rev. G, 16-Jul-01
VN2222LL
60
"30
"20
0.23
0.14
1.0
0.8
0.32
156
Unit
V
A
W
_C/W
_C
www.vishay.com
11-1


VN0605T 데이터시트, 핀배열, 회로
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Typa
VN10LLS
VN0610LL
Min Max
Limits
VN0605T
Min Max
VN2222LL
Min Max
Unit
Static
Drain-Source
Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate-Voltage
Drain Current
On-State Drain Currentb
Drain-Source
On-Resistanceb
Forward
Transconductanceb
Common Source
Output Conductanceb
IDSS
ID(on)
rDS(on)
gfs
gos
VGS = 0 V, ID = 100 mA
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 1 mA
VDS = 0 V, VGS = "20 V
TJ=125_C
VDS = 0 V, VGS = "30 V
VDS = 50 V, VGS = 0 V
TJ= 125_C
VDS = 48 V, VGS = 0 V
TJ= 125_C
VDS = 10 V, VGS = 10 V
VGS = 4.5 V, ID = 50 mA
VGS = 5 V, ID = 0.2 A
VGS = 10 V, ID = 0.5 A
TJ= 125_C
VDS = 10 V, ID = 0.5 A
VDS = 10 V, ID = 0.2 A
VDS = 5 V, ID = 50 mA
70 60
60
70 60
2.1 0.8 2.5 0.8 3.0 0.6 2.5
V
"100
"100
"500
nA
"100
10 1.0
500 500
mA
10
500
1000 750
500 750
mA
4.5 7.5
4.5 7.5
7.5
2.4 5
W
5 7.5
4.4 9 10 13.5
230 100
180
100
mS
80
500 ms
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Switchingc
Ciss 22 60 60 60
Coss
VDS =25 V, VGS = 0 V
f = 1 MHz
11
25
25 25 pF
Crss 2 5 5 5
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
tON
VDD = 15 V, RL = 23 W, ID ^ 0.6 A
7
10
10
tOFF
VGEN = 10 V, RG = 25 W
7
10
10
ns
tON
VDD = 30 V, RL = 150 W, ID ^ 0.2 A
7
20
tOFF
VGEN = 10 V, RG = 25 W
11
20
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Switching time is essentially independent of operating temperature.
VNBF06
www.vishay.com
11-2
Document Number: 70212
S-04279Rev. G, 16-Jul-01




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VN0605T mosfet

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