파트넘버.co.kr IRF1310NL 데이터시트 PDF


IRF1310NL 반도체 회로 부품 판매점

Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)



International Rectifier 로고
International Rectifier
IRF1310NL 데이터시트, 핀배열, 회로
l Advanced Process Technology
l Surface Mount (IRF1310NS)
l Low-profile through-hole (IRF1310NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF1310NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 91514B
IRF1310NS/L
HEXFET® Power MOSFET
D
VDSS =100V
RDS(on) = 0.036
S ID = 42A
D 2 Pak
T O -26 2
Max.
42
30
140
3.8
160
1.1
± 20
420
22
16
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.95
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98


IRF1310NL 데이터시트, 핀배열, 회로
IRF1310NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA…
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.036 VGS = 10V, ID = 22A „
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
14 ––– ––– S VDS = 25V, ID = 22A…
IDSS Drain-to-Source Leakage Current
––– ––– 25 µ A VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Qg Total Gate Charge
––– ––– 110
ID = 22A
Qgs Gate-to-Source Charge
––– ––– 15 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 58
VGS = 10V, See Fig. 6 and 13 „…
td(on)
Turn-On Delay Time
––– 11 –––
VDD = 50V
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
56 –––
45 ––– ns
ID = 22A
RG = 3.6
tf Fall Time
––– 40 –––
RD = 2.9Ω, See Fig. 10 „…
LS Internal Source Inductance
Between lead,
––– 7.5 ––– nH and center of die contact
Ciss Input Capacitance
––– 1900 –––
VGS = 0V
Coss Output Capacitance
––– 450 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 230 ––– ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) …
Min. Typ. Max. Units
Conditions
––– ––– 42
MOSFET symbol
A showing the
––– ––– 140
integral reverse
p-n junction diode.
G
D
S
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 1.3 V TJ = 25°C, IS =22A, VGS = 0V „
––– 180 270 ns TJ = 25°C, IF = 22A
––– 1.2 1.8 µC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width 300µs; duty cycle 2%.
‚ Starting TJ = 25°C, L = 1.7mH
RG = 25, IAS = 22A. (See Figure 12)
ƒ ISD 22A, di/dt 180A/µs, VDD V(BR)DSS,
TJ 175°C
… Uses IRF1310N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.




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제조업체: International Rectifier

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IRF1310NL mosfet

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