파트넘버.co.kr IRF1010Z 데이터시트 PDF


IRF1010Z 반도체 회로 부품 판매점

AUTOMOTIVE MOSFET



International Rectifier 로고
International Rectifier
IRF1010Z 데이터시트, 핀배열, 회로
PD - 94652A
AUTOMOTIVE MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Description
G
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
TO-220AB
IRF1010Z
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
www.irf.com
IRF1010Z
IRF1010ZS
IRF1010ZL
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 7.5m
ID = 75A
S
D2Pak
IRF1010ZS
TO-262
IRF1010ZL
Max.
94
66
75
360
140
0.90
± 20
130
180
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
–––
Max.
1.11
–––
62
40
Units
°C/W
1
9/8/03


IRF1010Z 데이터시트, 핀배열, 회로
IRF1010ZS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
55 ––– –––
––– 0.049 –––
––– 5.8 7.5
2.0 ––– 4.0
V VGS = 0V, ID = 250µA
eV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 75A
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
33 ––– ––– S VDS = 25V, ID = 75A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 63 95
ID = 75A
Qgs Gate-to-Source Charge
––– 19 ––– nC VDS = 44V
eQgd
Gate-to-Drain ("Miller") Charge
––– 24 –––
VGS = 10V
td(on)
Turn-On Delay Time
––– 18 –––
VDD = 28V
tr Rise Time
––– 150 –––
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
e––– 36 ––– ns RG = 6.8
––– 92 –––
VGS = 10V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 2840 –––
––– 420 –––
––– 250 –––
––– 1630 –––
––– 360 –––
––– 560 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 75
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 360
A showing the
integral reverse
––– ––– 1.3
––– 22 33
––– 15 23
ep-n junction diode.
V TJ = 25°C, IS = 75A, VGS = 0V
ens TJ = 25°C, IF = 75A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com




PDF 파일 내의 페이지 : 총 12 페이지

제조업체: International Rectifier

( ir )

IRF1010Z mosfet

데이터시트 다운로드
:

[ IRF1010Z.PDF ]

[ IRF1010Z 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


IRF1010

N-Channel Power MOSFET / Transistor - nELL



IRF1010E

Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A - International Rectifier



IRF1010EL

Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) - International Rectifier



IRF1010ELPbF

HEXFET Power MOSFET - International Rectifier



IRF1010EPBF

Power MOSFET ( Transistor ) - International Rectifier



IRF1010ES

Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) - International Rectifier



IRF1010ESPbF

HEXFET Power MOSFET - International Rectifier



IRF1010EZ

AUTOMOTIVE MOSFET - International Rectifier



IRF1010EZL

AUTOMOTIVE MOSFET - International Rectifier