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72413 반도체 회로 부품 판매점

Dual N-Channel 2.5-V (G-S) MOSFET



Vishay Siliconix 로고
Vishay Siliconix
72413 데이터시트, 핀배열, 회로
SPICE Device Model Si9926BDY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the 55 to 125°C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the 55 to 125°C
temperature ranges under the pulsed 0 to 5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched Cgd model. All model parameter values
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72413
01-Jun-04
www.vishay.com
1


72413 데이터시트, 핀배열, 회로
SPICE Device Model Si9926BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Currenta
VGS(th)
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
Forward Voltagea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Notes
a. Pulse test; pulse width 300 µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = 250 µA
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 8.2 A
VGS = 2.5 V, ID = 3.3 A
VDS = 15 V, ID = 8.2 A
IS = 1.7 A, VGS = 0 V
VDS = 10 V, VGS = 4.5 V, ID = 8.2 A
VDD = 10 V, RL = 10
ID 1 A, VGEN = 10 V, RG = 6
Simulated Measured
Data
Data
0.96
394
0.015
0.022
26
0.80
0.016
0.024
29
0.80
10 11
2.5 2.5
3.2 3.2
50 35
32 50
24 31
14 15
Unit
V
A
S
V
nC
ns
www.vishay.com
2
Document Number: 72413
01-Jun-04




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Dual N-Channel 2.5-V (G-S) MOSFET - Vishay Siliconix