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72231 반도체 회로 부품 판매점

Dual P-Channel 12-V (D-S) MOSFET



Vishay Siliconix 로고
Vishay Siliconix
72231 데이터시트, 핀배열, 회로
New Product
Si6911DQ
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.026 @ VGS = -4.5 V
-12 0.035 @ VGS = -2.5 V
0.046 @ VGS = -1.8 V
ID (A)
- 5.1
- 4.5
- 3.9
FEATURES
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch
D Battery Switch
S1 S2
TSSOP-8
D1 1 D
S1 2
S1 3
G1 4
Top View
8 D2
7 S2
6 S2
5 G2
Ordering Information: Si6911DQ T-1
G1 G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 5.1
- 4.1
- 1.0
1.14
0.73
- 12
"8
- 30
-55 to 150
- 4.3
- 3.5
- 0.7
0.83
0.53
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72231
S-31064—Rev. A, 26-May-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
86
124
59
Maximum
110
150
75
Unit
_C/W
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72231 데이터시트, 핀배열, 회로
Si6911DQ
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 300 mA
VDS = 0 V, VGS = "8 V
VDS = - 9.6 V, VGS = 0 V
VDS = -9.6 V, VGS = 0 V, TJ = 70_C
VDS = -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -5.1 A
VGS = -2.5 V, ID = -4.5 A
VGS = -1.8 V, ID = -3.9 A
VDS = -5 V, ID = -5.1 A
IS = -1.0 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = -6 V, VGS = -4.5 V, ID = -5.1 A
VDD = -6 V, RL = 6 W
ID ^ -1 A, VGEN = -4.5 V, RG = 6 W
IF = -1.0 A, di/dt = 100 A/ms
Min Typ Max Unit
-0.4 -0.9 V
"100
nA
-1
mA
- 25
-20 A
0.021
0.028
0.026
0.035
W
0.037
0.046
W
20
- 0.65
- 1.1
S
V
16 24
1.9 nC
3.9
35 55
62 100
120 180 ns
70 110
65 100
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
VGS = 5 thru 2.5 V
24
2V
18
Transfer Characteristics
30
TC = -55_C
24 25_C
125_C
18
12 12
6 1.5 V
0
0
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2
1234
VDS - Drain-to-Source Voltage (V)
5
6
0
0.0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Document Number: 72231
S-31064—Rev. A, 26-May-03




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Dual P-Channel 12-V (D-S) MOSFET - Vishay Siliconix