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Tyco Electronics |
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* an AMP company
RF MOSFET
2 - 175 MHz
Power
Transistor,
6OW, 28V
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
..
Absolute Maximum Ratings at 25°C
-*-
DU2860T
v2.00
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
CISS
135 pF V,,=28.0 V, F=l .OMHz
Coss
120 pF V,,=28.0 V, F=l .OMHz
CRSS
24 pF V,,=28.0 V, F=l .OMHz
GP 13 - dB V,,=28.0 V, I,,=300 mA, P,,=60.0 W, F=l75 MHz
% 60 - % V,,=28.0 V, I,,=300 mA, P,,=60.0 W, F=175 MHz
VSWR-T
-
3O:l - V,,=28.0 V, I,,=300 mA, P,#GO.O W, F=l75 MHz
SpecificationsSubjectto Change WAhout Notice.
North America:
Tel. (800) 3662266
Fax (800) 618-8883
n Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
M/A-COM, Inc.
n Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
RF MOSFET Power Transistor, 6OW, 28V
Typical Broadband Performance Curves
GAIN vs FREQUENCY
25 I’,,=28 V I,,=300 mA PO,=60 W
DU2860T
v2.00
EFFICIENCY vs FREQUENCY
ao- V,,=28 V I,,=300 mA PO”,.=60 W
10 -
50
100 150
FREQUENCY (MHz)
200
2.5 50
100
1.50
200
FREQUENCY (MHz)
POWER OUTPUT vs POWER INPUT
V,,=20 V I,,=300 mA
801
1
0
0.5
1
1.5
2
2.5 2.75
3
POWER INPUT(W)
Specifications Subject to Change Wiiout Notice.
MIA-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
m Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
u Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
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