FQP30N06L 반도체 회로 부품 판매점
60V LOGIC N-Channel MOSFET
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 Fairchild Semiconductor |
FQP30N06L
60V LOGIC N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 32A, 60V, RDS(on) = 0.035Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
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!
S
FQP30N06L
60
32
22.6
128
± 20
350
32
7.9
7.0
79
0.53
-55 to +175
300
Typ Max
-- 1.90
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
60 -- -- V
ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
-- -- 1 µA
-- -- 10 µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
-- -- 100 nA
-- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 16 A
VGS = 5 V, ID =16 A
VDS = 25 V, ID = 16 A
(Note 4)
1.0 --
2.5
-- 0.027 0.035
-- 0.035 0.045
-- 24
--
V
Ω
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 800 1040 pF
-- 270 350
pF
-- 50 65 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 30 V, ID = 16 A,
RG = 25 Ω
-- 15
40
-- 210 430
-- 60 130
(Note 4, 5) -- 110 230
VDS = 48 V, ID = 32 A,
-- 15
VGS = 5 V
-- 3.5
(Note 4, 5) -- 8.5
20
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 32 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 128 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 32 A
-- -- 1.5 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 32 A,
-- 60
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
90
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 400µH, IAS = 32A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 32A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
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FQP30N06L mosfet
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60V LOGIC N-Channel MOSFET - Fairchild Semiconductor