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PDF FQP27P06 Data sheet ( Hoja de datos )
| Número de pieza | FQP27P06 | |
| Descripción | 60V P-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2013
FQP27P06
P-Channel QFET® MOSFET
- 60 V, - 27 A, 70 m
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V,
ID = - 13.5 A
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating
S
G
D
S
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G
●
●
▶▲
●
D
FQP27P06
-60
-27
-19.1
-108
25
560
-27
12
-7.0
120
0.8
-55 to +175
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQP27P06
1.25
0.5
62.5
Unit
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
FQP27P06 Rev.C0
1
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
-10V
Qg
VGS
VDS
Qgs Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
-10V
VDS
VGS
RG
RL
VDD
DUT
VGS
10%
td(on)
t on
tr
VDS
90%
t off
td(off)
tf
-10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
L
VDS
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
I D t p Time
RG
VDD
VDD
ID (t)
VDS (t)
DUT
IAS
BVDSS
©2001 Fairchild Semiconductor Corporation
FQP27P06 Rev.C0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FQP27P06.PDF ] | |
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