FQP24N08 반도체 회로 부품 판매점
80V N-Channel MOSFET
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 Fairchild Semiconductor |
FQP24N08
80V N-Channel MOSFET
August 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Features
• 24A, 80V, RDS(on) = 0.06Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
GDS
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP24N08
80
24
17
96
± 25
230
24
7.5
6.5
75
0.5
-55 to +175
300
Typ Max
-- 2.0
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A, August 2000
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
80 --
ID = 250 µA, Referenced to 25°C -- 0.08
--
--
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
VDS = 64 V, TC = 150°C
-- --
-- --
1
10
IGSSF
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
-- -- 100
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- -- -100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 12 A
VDS = 30 V, ID = 12 A
(Note 4)
2.0 --
-- 0.048
-- 12
4.0
0.06
--
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 580 750
-- 210 270
-- 50 65
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 40 V, ID = 24 A,
RG = 25 Ω
-- 10
30
-- 105 220
-- 30
70
(Note 4, 5)
--
35
80
VDS = 64 V, ID = 24 A,
VGS = 10 V
(Note 4, 5)
--
--
--
19
4.2
9.6
25
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 24
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- --
96
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 24 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 24 A,
dIF / dt = 100 A/µs
-- 63
(Note 4)
--
130
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.55mH, IAS = 24A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 24A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
A
A
V
ns
nC
©2000 Fairchild Semiconductor International
Rev. A, August 2000
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FQP24N08 mosfet
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