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FQP20N06 반도체 회로 부품 판매점

60V N-Channel MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FQP20N06 데이터시트, 핀배열, 회로
FQP20N06
60V N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 20A, 60V, RDS(on) = 0.06@VGS = 10 V
• Low gate charge ( typical 11.5 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP20N06
60
20
14.1
80
± 25
155
20
5.3
7.0
53
0.35
-55 to +175
300
Typ Max
-- 2.85
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001


FQP20N06 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
60 --
ID = 250 µA, Referenced to 25°C -- 0.07
--
--
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
-- --
-- --
1
10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- -- 100
-- -- -100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 10 A
VDS = 25 V, ID = 10 A (Note 4)
2.0 --
4.0
-- 0.048 0.06
-- 12
--
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 450 590
-- 170 220
-- 25
35
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 30 V, ID = 10 A,
RG = 25
-- 5
20
-- 45 100
-- 20
50
(Note 4, 5)
--
25
60
VDS = 48 V, ID = 20 A,
VGS = 10 V
(Note 4, 5)
-- 11.5
-- 3
-- 4.5
15
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 20 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 80 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 20 A
-- -- 1.5 V
trr Reverse Recovery Time
VGS = 0 V, IS = 20 A,
-- 43
--
ns
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
--
50
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 450µH, IAS = 20A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 20A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001




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FQP20N06 mosfet

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