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Fairchild Semiconductor |
FQP18N50V2/FQPF18N50V2
500V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficient switched mode power supplies,
active power factor correction, electronic lamp ballast
based on half bridge topology.
Features
• 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
D
!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQP18N50V2 FQPF18N50V2
500
18 18
12.1
12.1
72 72
± 30
330
18
25
4.5
208 69
1.67
0.55
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP18N50V2
0.6
0.5
62.5
FQPF18N50V2
1.8
--
62.5
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
500
--
--
0.5
-- V
-- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
-- --
1 µA
-- -- 10 µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- -- 100 nA
-- -- -100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
5.0
VGS = 10 V, ID = 9 A
-- 0.225 0.265
VDS = 40 V, ID = 9 A
(Note 4) --
16
--
V
Ω
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 400 V, VGS = 0 V,
f = 1.0 MHz
VDS = 0V to 400 V, VGS = 0 V
-- 2530 3290 pF
-- 300 390 pF
-- 11 14.3 pF
-- 76 -- pF
-- 150
--
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 250 V, ID = 18 A,
RG = 25 Ω
(Note 4, 5)
VDS = 400 V, ID = 18 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
40 90
150 310
95 200
110 230
42 55
12 --
14 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 18
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 72
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 18 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 18 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
420
5.4
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.83mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
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