파트넘버.co.kr FQP18N50V2 데이터시트 PDF


FQP18N50V2 반도체 회로 부품 판매점

500V N-Channel MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FQP18N50V2 데이터시트, 핀배열, 회로
FQP18N50V2/FQPF18N50V2
500V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficient switched mode power supplies,
active power factor correction, electronic lamp ballast
based on half bridge topology.
Features
• 18A, 500V, RDS(on) = 0.265@VGS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
D
!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQP18N50V2 FQPF18N50V2
500
18 18
12.1
12.1
72 72
± 30
330
18
25
4.5
208 69
1.67
0.55
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP18N50V2
0.6
0.5
62.5
FQPF18N50V2
1.8
--
62.5
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002


FQP18N50V2 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
500
--
--
0.5
-- V
-- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
-- --
1 µA
-- -- 10 µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- -- 100 nA
-- -- -100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
5.0
VGS = 10 V, ID = 9 A
-- 0.225 0.265
VDS = 40 V, ID = 9 A
(Note 4) --
16
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 400 V, VGS = 0 V,
f = 1.0 MHz
VDS = 0V to 400 V, VGS = 0 V
-- 2530 3290 pF
-- 300 390 pF
-- 11 14.3 pF
-- 76 -- pF
-- 150
--
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 250 V, ID = 18 A,
RG = 25
(Note 4, 5)
VDS = 400 V, ID = 18 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
40 90
150 310
95 200
110 230
42 55
12 --
14 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 18
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 72
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 18 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 18 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
420
5.4
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.83mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 18A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002




PDF 파일 내의 페이지 : 총 10 페이지

제조업체: Fairchild Semiconductor

( fairchild )

FQP18N50V2 mosfet

데이터시트 다운로드
:

[ FQP18N50V2.PDF ]

[ FQP18N50V2 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


FQP18N50V2

500V N-Channel MOSFET - Fairchild Semiconductor