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PDF FQP10N20C Data sheet ( Hoja de datos )
| Número de pieza | FQP10N20C | |
| Descripción | 200V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Features
• 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP10N20C FQPF10N20C
200
9.5 9.5 *
6.0 6.0 *
38 38 *
± 30
210
9.5
7.2
5.5
72 38
0.57 0.3
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP10N20C
1.74
0.5
62.5
FQPF10N20C
3.33
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
1 page  
Typical Characteristics (Continued)
10 0 D = 0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
※ N o te s :
1 . Z θ J C( t ) = 1 . 7 4 ℃ / W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
101
Figure 11-1. Transient Thermal Response Curve for FQP10N20C
D = 0.5
100
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
※ N o te s :
1 . Z θ J C( t ) = 3 . 3 3 ℃ / W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
1 0 -2
1 0 -5
sin g le p u lse
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
101
Figure 11-2. Transient Thermal Response Curve for FQPF10N20C
©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FQP10N20C.PDF ] | |
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