FQD7P06 반도체 회로 부품 판매점
60V P-Channel MOSFET
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 Fairchild Semiconductor |
FQD7P06 / FQU7P06
60V P-Channel MOSFET
May 2001
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• -5.4A, -60V, RDS(on) = 0.45Ω @VGS = -10 V
• Low gate charge ( typical 6.3 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G!
S
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▶▲
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D
FQD7P06 / FQU7P06
-60
-5.4
-3.42
-21.6
± 25
90
-5.4
2.8
-7.0
2.5
28
0.22
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Typ Max Units
-- 4.5 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. A2. May 2001
Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = -250 µA
-60 --
ID = -250 µA, Referenced to 25°C -- -0.07
--
--
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
VDS = -48 V, TC = 125°C
-- --
-1
-- -- -10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V
-- -- -100
-- -- 100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-2.0 --
-4.0
VGS = -10 V, ID = -2.7 A
-- 0.36 0.451
VDS = -30 V, ID = -2.7 A (Note 4)
--
3.8
--
V
Ω
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 225 295
-- 110 145
-- 25 32
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -30 V, ID = -3.5 A,
RG = 25 Ω
(Note 4, 5)
VDS = -48 V, ID = -7.0 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
7 25
50 110
7.5 25
25 60
6.3 8.2
1.6 --
3.1 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- -5.4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
--
-- -21.6
A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -5.4 A
-- -- -4.0 V
trr Reverse Recovery Time
VGS = 0 V, IS = -7.0 A,
-- 77
--
ns
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) -- 0.23
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.6mH, IAS = -5.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -7.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
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FQD7P06 mosfet
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