파트넘버.co.kr FQD6N40C 데이터시트 PDF


FQD6N40C 반도체 회로 부품 판매점

400V N-Channel MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FQD6N40C 데이터시트, 핀배열, 회로
FQD6N40C / FQU6N40C
400V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
electronic lamp ballasts based on half bridge topology.
Features
• 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D!
D-PAK
G S FQD Series
GDS
I-PAK
FQU Series
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C)*
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD6N40C / FQU6N40C
400
4.5
2.7
18
± 30
270
4.5
4.8
4.5
2.5
48
0.38
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient.*
RθJA
Thermal Resistance, Junction-to-Ambient.
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 2.6 °C/W
-- 50 °C/W
-- 110 °C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003


FQD6N40C 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
400 --
ID = 250 µA, Referenced to 25°C -- 0.54
IDSS
Zero Gate Voltage Drain Current
VDS = 400 V, VGS = 0 V
VDS = 320 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.25A
VDS = 40 V, ID = 2.25A
(Note 4)
2.0
--
--
--
0.83
4.7
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 480
-- 80
-- 15
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 200 V, ID = 6A,
RG = 25
(Note 4, 5)
VDS = 320 V, ID = 6A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
13
65
21
38
16
2.3
8.2
--
--
1
10
100
-100
4.0
1
--
625
105
20
35
140
55
85
20
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 4.5
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 18
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.5 A
-- -- 1.4
trr Reverse Recovery Time
VGS = 0 V, IS = 6 A,
-- 230
--
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
1.7
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13.7 mH, IAS = 6 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 6A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003




PDF 파일 내의 페이지 : 총 9 페이지

제조업체: Fairchild Semiconductor

( fairchild )

FQD6N40C mosfet

데이터시트 다운로드
:

[ FQD6N40C.PDF ]

[ FQD6N40C 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


FQD6N40

400V N-Channel MOSFET - Fairchild Semiconductor



FQD6N40C

400V N-Channel MOSFET - Fairchild Semiconductor