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Fairchild Semiconductor |
FQD1N50B / FQU1N50B
500V N-Channel MOSFET
May 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.
Features
• 1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 3.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
D
!
"
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G!
"
"
!
S
FQD1N50 / FQU1N50
500
1.1
0.7
4.4
± 30
80
1.1
2.5
4.5
2.5
25
0.2
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Typ Max Units
-- 5.0 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. A, May 2000
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
--
--
--
--
--
--
0.5
--
--
--
--
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
gFS
Static Drain-Source
On-Resistance
Forward Transconductance
VDS = VGS, ID = 250 µA
VDS = VGS, ID = 250 mA
2.3 3.0
3.6 4.3
VGS = 10 V, ID = 0.55 A
-- 6.8
VDS = 50 V, ID = 0.55 A (Note 4) -- 0.98
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 115
-- 20
-- 3
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 250 V, ID = 1.4 A,
RG = 25 Ω
(Note 4, 5)
VDS = 400 V, ID = 1.4 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
5
25
8
20
4.0
1.1
2.2
--
--
1
10
100
-100
3.7
5.0
9.0
--
150
30
4
20
60
25
50
5.5
--
--
V
V/°C
µA
µA
nA
nA
V
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 1.4
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.4 A
-- -- 4.4
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 1.4 A,
-- 170
dIF / dt = 100 A/µs
(Note 4)
--
0.4
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 120mH, IAS = 1.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 1.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A, May 2000
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