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FQAF13N80 반도체 회로 부품 판매점

800V N-Channel MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FQAF13N80 데이터시트, 핀배열, 회로
FQAF13N80
800V N-Channel MOSFET
March 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 8.0A, 800V, RDS(on) = 0.75@VGS = 10 V
• Low gate charge ( typical 68 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G DS
TO-3PF
FQAF Series
D
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G!
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQAF13N80
800
8.0
5.1
32
± 30
1100
8.0
12
4.0
120
0.96
-55 to +150
300
Typ Max
-- 1.04
-- 40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, March 2001


FQAF13N80 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
800 --
ID = 250 µA, Referenced to 25°C -- 0.95
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
5.0
VGS = 10 V, ID = 4.0 A
-- 0.58 0.75
VDS = 50 V, ID = 4.0 A (Note 4) -- 10.5
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2700 3500
-- 275 360
-- 30
39
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 400 V, ID = 12.6 A,
RG = 25
-- 60 130
-- 150 310
-- 155 320
(Note 4, 5)
--
110
230
VDS = 640 V, ID = 12.6 A,
VGS = 10 V
(Note 4, 5)
--
--
--
68
15
32
88
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 8.0
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 36
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.0 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 12.6 A,
-- 850
dIF / dt = 100 A/µs
(Note 4) -- 11.3
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 32mH, IAS = 8.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 12.6A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
Rev. A, March 2001




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FQAF13N80 mosfet

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FQAF13N80

800V N-Channel MOSFET - Fairchild Semiconductor