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FQA90N08 반도체 회로 부품 판매점

80V N-Channel MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FQA90N08 데이터시트, 핀배열, 회로
FQA90N08
80V N-Channel MOSFET
January 2001
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
high efficiency switching for DC/DC converters, and DC
motor control.
Features
• 90A, 80V, RDS(on) = 0.016@VGS = 10 V
• Low gate charge ( typical 84 nC)
• Low Crss ( typical 200 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
G DS
TO-3P
FQA Series
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQA90N08
80
90
63.5
360
± 25
1360
90
21.4
6.5
214
1.43
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.7
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A1, January 2001


FQA90N08 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
80
--
--
0.1
-- V
-- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
-- -- 1 µA
-- -- 10 µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- -- 100 nA
-- -- -100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 45 A
VDS = 30 V, ID = 45 A
(Note 4)
2.0 --
4.0
-- 0.012 0.016
-- 52
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2500 3250
-- 900 1170
-- 200 260
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 40 V, ID = 90 A,
RG = 25
-- 30
70
-- 360 730
-- 100 210
(Note 4, 5)
--
160
330
VDS = 64 V, ID = 90 A,
-- 84 110
VGS = 10 V
-- 17
--
(Note 4, 5) --
42
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 90
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 360
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 90 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 90 A,
dIF / dt = 100 A/µs
-- 87
(Note 4) -- 265
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.23mH, IAS = 90A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 90A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
nC
©2000 Fairchild Semiconductor International
Rev. A1, January 2001




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FQA90N08 mosfet

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FQA90N08

80V N-Channel MOSFET - Fairchild Semiconductor