FQA65N20 반도체 회로 부품 판매점
200V N-Channel MOSFET
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 Fairchild Semiconductor |
FQA65N20
200V N-Channel MOSFET
August 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, DC-AC converters for
uninterrupted power supply, motor control.
Features
• 65A, 200V, RDS(on) = 0.032Ω @VGS = 10 V
• Low gate charge ( typical 170 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G!
G DS
TO-3P
FQA Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
D
!
"
!"
"
"
!
S
FQA65N20
200
65
41
260
± 30
1010
65
31
5.5
310
2.5
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.4
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
200 --
ID = 250 µA, Referenced to 25°C -- 0.15
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 32.5 A
VDS = 40 V, ID = 32.5 A (Note 4)
3.0 --
5.0
-- 0.025 0.032
-- 58
--
V
Ω
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 6600 7900
-- 1000 1200
-- 90 120
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 100 V, ID = 65 A,
RG = 25 Ω
-- 120 250
-- 640 770
-- 340 690
(Note 4, 5)
--
275
560
VDS = 160 V, ID = 65 A,
-- 170 200
VGS = 10 V
-- 45
--
(Note 4, 5) --
75
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 65
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 260
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 65 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 65 A,
dIF / dt = 100 A/µs
-- 195
(Note 4)
--
1.4
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.36mH, IAS = 65A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 65A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
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FQA65N20 mosfet
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