FQA22P10 반도체 회로 부품 판매점
100V P-Channel MOSFET
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 Fairchild Semiconductor |
FQA22P10
100V P-Channel MOSFET
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -24A, -100V, RDS(on) = 0.125Ω @VGS = -10 V
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 160 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
D
G DS
TO-3P
FQA Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
S
FQA22P10
-100
-24
-17
-96
± 30
710
-24
15
-6.0
150
1.0
-55 to +175
300
Typ
--
0.24
--
Max
1.0
--
40
©2002 Fairchild Semiconductor Corporation
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev. C2, August 2002
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -100 V, VGS = 0 V
VDS = -80 V, TC = 125°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
-100
--
--
--
--
--
--
-0.1
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
VGS = -10 V, ID = -12 A
VDS = -40 V, ID = -12 A (Note 4)
-2.0 --
-4.0
-- 0.096 0.125
-- 14
--
V
Ω
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 1170 1500 pF
-- 460 600 pF
-- 160 200 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -50 V, ID = -22 A,
RG = 25 Ω
(Note 4, 5)
VDS = -80 V, ID = -22 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
17 45
170 350
60 130
110 230
40 50
7.0 --
21 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -24 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = -22 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.85mH, IAS = -24A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -22A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- -24
-- -96
-- -4.0
110 --
0.6 --
A
A
V
ns
µC
©2002 Fairchild Semiconductor Corporation
Rev. C2, August 2002
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FQA22P10 mosfet
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