파트넘버.co.kr FDZ7064N 데이터시트 PDF


FDZ7064N 반도체 회로 부품 판매점

30V N-Channel Logic Level PowerTrench BGA MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDZ7064N 데이터시트, 핀배열, 회로
January 2003
FDZ7064N
30V N-Channel Logic Level PowerTrenchBGA MOSFET
General Description
Features
Combining Fairchild’s 30V PowerTrench process with
state of the art BGA packaging, the FDZ7064N
minimizes both PCB space and RDS(ON). This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications resulting in DC/DC power supply
designs with higher overall efficiency.
Applications
13.5 A, 30 V. RDS(ON) = 8.0 m@ VGS = 4.5 V
RDS(ON) = 7.0 m@ VGS = 10 V
Occupies only 14 mm2 of PCB area. Only 42% of
the area of SO-8
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
3.5 x 4 mm2 Footprint
High power and current handling capability.
DC/DC converters
Solenoid drive
Pin 1
D DDD DD
D SS S SD
D SS S SD
D SS S SD
DGSS SD
Bottom
Pin 1
Top
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJB Thermal Resistance, Junction-to-Ball
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
7064N
FDZ7064N
13”
Ratings
30
±12
13.5
60
2.2
–55 to +150
56
4.5
0.6
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000
2003 Fairchild Semiconductor Corporation
FDZ7064N Rev. D2 (W)


FDZ7064N 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA
30
V
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
21 mV/°C
1 µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V, VDS = 0 V
100 nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V, VDS = 0 V
–100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
0.8 1.2 2.0
V
–4.6 mV/°C
VGS = 4.5 V, ID = 13.5 A
6.1 8.0 m
VGS = 10 V, ID = 14.5 A
5.4 7.0
VGS = 4.5 V, ID = 13.5A, TJ =125°C
9.0 13
VGS = 10 V, VDS = 5 V
60
A
VDS = 10 V, ID = 13.5 A
92 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 15 V, ID = 13.5 A,
VGS = 4.5 V
3843
522
209
pF
pF
pF
10 20
9 18
71 114
18 32
31 43
8
7.4
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 1.8 A (Note 2)
trr
Diode Reverse Recovery Time
IF = 13.5 A,
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs
1.8
0.7 1.2
30
35
A
V
nS
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the
circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper
chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a) 56°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 119°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.Pulse Test: Pulse Width <
300µs, Duty Cycle < 2.0%
FDZ7064N Rev. D2(W)




PDF 파일 내의 페이지 : 총 6 페이지

제조업체: Fairchild Semiconductor

( fairchild )

FDZ7064N mosfet

데이터시트 다운로드
:

[ FDZ7064N.PDF ]

[ FDZ7064N 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


FDZ7064N

30V N-Channel Logic Level PowerTrench BGA MOSFET - Fairchild Semiconductor



FDZ7064S

30V N-Channel PowerTrench SyncFET BGA MOSFET - Fairchild Semiconductor