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Fairchild Semiconductor |
May 2004
FDZ209N
60V N-Channel PowerTrench BGA MOSFET
General Description
Combining Fairchild’s advanced PowerTrench process
with state-of-the-art BGA packaging, the FDZ209N
minimizes both PCB space and RDS(ON). This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
Applications
• Solenoid Drivers
Features
• 4 A, 60 V.
RDS(ON) = 80 mΩ @ VGS = 5 V
• Occupies only 5 mm2 of PCB area: only 55% of the
area of SSOT-6
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
• Outstanding thermal transfer characteristics:
4 times better than SSOT-6
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability
Index
slot
DDD
SSS
GSS
DDD
Bottom
Index
slot
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJB Thermal Resistance, Junction-to-Ball
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
209N
FDZ209N
7’’
D
G
S
Ratings
60
±20
4
20
2
–55 to +150
64
8
0.7
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
FDZ209N Rev B2 (W)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 30 V,
90 mJ
IAR Drain-Source Avalanche Current ID= 4 A
4A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V,
ID = 250 µA
60
∆BVDSS
Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C
59
∆TJ Coefficient
V
mV/°C
IDSS
Zero Gate Voltage Drain Current VDS = 48 V,
VGS = 0 V
1 µA
IGSS Gate–Body Leakage.
VGS = ±20 V, VDS = 0 V
±100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS,
ID = 250 µA
1 2.5 3
V
ID = 250 µA, Referenced to 25°C
–6 mV/°C
VGS = 5 V,
ID = 4 A
VGS = 5 V, ID = 4 A, TJ=125°C
VDS = 5 V,
ID = 4 A
60 80 mΩ
91 130
12 S
Ciss Input Capacitance
Coss Output Capacitance
VDS = 30 V,
f = 1.0 MHz
V GS = 0 V,
657 pF
76 pF
Crss Reverse Transfer Capacitance
32 pF
RG Gate Resistance
VGS = 15 mV, f = 1.0 MHz
1.5 Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
VDD = 30 V,
VGS = 5 V,
ID = 1 A,
RGEN = 6 Ω
18 32
48
ns
ns
td(off) Turn–Off Delay Time
15 27
ns
tf Turn–Off Fall Time
8 16 ns
Qg Total Gate Charge
Qgs Gate–Source Charge
VDS = 30 V,
VGS = 5 V
ID = 4 A,
6.3 9
2.5
nC
nC
Qgd Gate–Drain Charge
2.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 1.7 A (Note 2)
Voltage
0.77
1.7
1.2
A
V
trr
Diode Reverse Recovery Time
IF = 4A
27 nS
Qrr
Diode Reverse Recovery Charge diF/dt = 100 A/µs
(Note 2)
45 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a) 64°C/W when
mounted on a 1in2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b) 128°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ209N Rev B2 (W)
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