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FDZ201N 반도체 회로 부품 판매점

N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDZ201N 데이터시트, 핀배열, 회로
November 1999
ADVANCE INFORMATION
FDZ201N
N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ201N minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
= Battery management
= Load switch
= Battery protection
Features
= 9 A, 20 V.
=RDS(ON) = 0.018 @ VGS = 4.5 V
RDS(ON) = 0.030 @ VGS = 2.5 V.
= Occupies only 5 mm2 of PCB area.
Only 55% of the area of SSOT-6
= Ultra-thin package: less than 0.70 mm height when
mounted to PCB
= Outstanding thermal transfer characteristics:
4 times better than SSOT-6
= Ultra-low Qg x RDS(ON) figure-of-merit.
= High power and current handling capability.
Pin 1
DDD
SSS
GSS
DDD
Bottom
Pin 1
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
F201
FDZ201N
TBD
D
G
S
Ratings
20
±12
9
20
2.7
-55 to +175
55
12
Tape width
TBD
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
TBD
1999 Fairchild Semiconductor Corporation
FDZ201N Rev A (W)


FDZ201N 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
===TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage Current,
Forward
IGSSR
Gate–Body Leakage Current,
Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 16 V,
VGS = 12 V,
VGS = 0 V
VDS = 0 V
VGS = –12 V VDS = 0 V
20
V
14 mV/°C
1 µA
100 nA
–100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
VGS = 4.5 V, ID = 9 A
VGS = 2.5 V, ID = 6.5 A
0.4 0.9 1.5
V
0.018
0.030
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward
VGS = 0 V, IS = 2.3 A (Note 2)
Voltage
2.3
0.77 1.2
A
V
Notes:
1. RθJA is a function of the junction-to-case (RθJC), case-to-ambient (RθCA ) and the PC Board (RθBA ) thermal resistance where the case thermal reference is
defined the top surface of the package. RθJC is guaranteed by design while RθCA and RθBA are determined by the user's design.
(a). RθJA = 55°C/W (steady-state) when mounted on 1 in2 of 2 oz. copper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ201N Rev A (W)




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FDZ201N mosfet

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FDZ201N

N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET - Fairchild Semiconductor