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Fairchild Semiconductor |
May 2003
FDS6676
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 14.5 A, 30 V. RDS(ON) = 7 mΩ @ VGS = 10 V
RDS(ON) = 8 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (45 nC typ)
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Conti nuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6676
FDS6676
13’’
5
6
7
8
Ratings
30
± 16
14.5
50
2.5
1.2
1.0
–55 to +175
50
125
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2003 Fairchild Semiconductor Corporation
FDS6676 Rev D (W)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V,
IAR Maximum Drain-Source
Avalanche Current
Off Characteristics
ID = 20 A
370 mJ
20 A
BVDSS
∆BVDSS
∆TJ
IDSS
IGSSF
IGSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 16 V,
VGS = –16 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
30 V
24 mV/°C
1
100
–100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
1
VGS = 10 V, ID = 14.5 A
VGS = 4.5 V, ID = 13.5 A
VGS = 10 V, ID = 14.5 A, TJ = 125°C
VGS = 10 V, VDS = 5 V
50
1.5 3
V
–5 mV/°C
4.8 7
5.4 8
7.3 11.5
mΩ
A
gFS
Forward Transconductance
VDS = 5 V,
ID = 14.5 A
80 S
Dynamic Characteristics
Ciss Input Capacitance
VDS = 15 V, V GS = 0 V,
Coss Output Capacitance
f = 1.0 MHz
Crss Reverse Transfer Capacitance
5103
836
361
pF
pF
pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDS = 15 V,
VGS = 5 V
ID = 14.5 A,
15 27
9 18
87 139
40 64
45 63
13
12
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 2.1 A (Note 2)
2.1
0.7 1.2
A
V
FDS6676 Rev D (W)
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