FDS5680 반도체 회로 부품 판매점
60V N-Channel PowerTrench MOSFET
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 Fairchild Semiconductor |
July 1999
FDS5680
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Motor drives
Features
8 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V
RDS(ON) = 0.025 Ω @ VGS = 6 V.
Low gate charge (30nC typical).
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
D
D
D
D
54
63
SO-8
G
SS
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
7
8
2
1
Ratings
60
±20
8
50
2.5
1.2
1
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS5680
FDS5680
13’’
50
25
Tape Width
12mm
°C/W
°C/W
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDS5680 Rev. C
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 48 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
60
V
27 mV/°C
1
100
-100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
2
2.5
-4.5
4V
mV/°C
VGS = 10 V, ID = 8 A
VGS = 10 V, ID = 8 A, TJ = 125°C
VGS = 6 V, ID = 7.5 A
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 8 A
0.017 0.020
0.027 0.032
0.019 0.025
25
28
Ω
A
mS
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V
f = 1.0 MHz
1850
290
100
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 30 V, ID = 1 A
VGS = 10 V, RGEN = 6 Ω
VDS = 15 V, ID = 8 A
VGS = 10 V,
13 24
8 16
16 26
32 50
30 42
8.5
5.5
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
2.1
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
(Note 2)
0.74 1.2
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
A
V
a) 50° C/W when
mounted on a 0.5 in2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.02 in2
pad of 2 oz. copper.
c) 125° C/W when
mounted on a minimum pad.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDS5680 Rev. C
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FDS5680 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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