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FDN5630 반도체 회로 부품 판매점

60V N-Channel PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDN5630 데이터시트, 핀배열, 회로
March 2000
FDN5630
60V N-Channel PowerTrenchMOSFET
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
This MOSFET features very low RDS(ON) in a small SOT23
footprint. Fairchild’s PowerTrench technology provides
faster switching than other MOSFETs with comparable
RDS(ON) specifications. The result is higher overall
efficiency with less board space.
Applications
DC/DC converter
Motor drives
1.7 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V
RDS(ON) = 0.120 @ VGS = 6 V.
Optimized for use in high frequency DC/DC converters.
Low gate charge.
Very fast switching.
SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint.
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA = 25 C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
5630
FDN5630
7
GS
Ratings
60
±20
1.7
10
0.5
0.46
-55 to +150
250
75
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDN5630 Rev. C


FDN5630 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TA = 25 C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(ON)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 48 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
60
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
1
VGS = 10 V, ID = 1.7 A
VGS = 10 V, ID = 1.7 A, TJ = 125°C
VGS = 6 V, ID = 1.6 A
VGS = 10 V, VDS = 1.7 V
VDS = 10 V, ID = 1.7 A
5
V
63 mV/°C
1
100
-100
µA
nA
nA
2.4 3
V
6.9 mV/°C
0.073 0.100
0.127 0.180
0.083 0.120
6
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
400 pF
102 pF
21 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 30 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 20 V, ID = 1.7 A,
VGS = 10 V,
10 20
6 15
15 28
5 15
7 10
1.6
1.2
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
0.42
VSD Drain-Source Diode Forward VGS = 0 V, IS = 0.42 A (Note 2)
Voltage
0.72 1.2
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design.
A
V
a) 250°C/W when
mounted on a 0.02 in2
Pad of 2 oz. Cu.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
b) 270°C/W when
mounted on a minimum
pad.
FDN5630 Rev. C




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제조업체: Fairchild Semiconductor

( fairchild )

FDN5630 mosfet

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FDN5630

60V N-Channel PowerTrench MOSFET - Fairchild Semiconductor