파트넘버.co.kr FDN306P 데이터시트 PDF


FDN306P 반도체 회로 부품 판매점

P-Channel 1.8V Specified PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDN306P 데이터시트, 핀배열, 회로
December 2001
FDN306P
P-Channel 1.8V Specified PowerTrenchMOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Battery management
Load switch
Battery protection
Features
–2.6 A, –12 V.
RDS(ON) = 40 m@ VGS = –4.5 V
RDS(ON) = 50 m@ VGS = –2.5 V
RDS(ON) = 80 m@ VGS = –1.8 V
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
306
FDN306P
7’’
GS
Ratings
–12
±8
2.6
10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDN306P Rev D (W)


FDN306P 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V,
ID = –250 µA
ID = –250 µA,Referenced to 25°C
VDS = –10 V,
VGS = 8 V,
VGS = –8 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = –250 µA
ID = –250 µA,Referenced to 25°C
VGS = –4.5 V,
VGS = –2.5 V,
VGS = –1.8V,
ID = –2.6 A
ID = –2.3 A
ID = –1.8 A
VGS = –4.5 V, ID = –2.6A , TJ=125°C
VGS = –4.5 V, VDS = –5 V
VDS = –5 V,
ID = –2.6 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –6 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –6 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6
VDS = –6 V,
VGS = –4.5 V
ID = –2.6 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V,
IS = –0.42 (Note 2)
Voltage
–12
–0.4
–10
–3
–0.6
2.5
30
39
54
40
10
1138
454
302
11
10
38
35
12
2
3
–0.6
V
mV/°C
–1
100
–100
µA
nA
nA
–1.5 V
mV/°C
40 m
50
80
54
A
S
pF
pF
pF
20 ns
20 ns
61 ns
56 ns
17 nC
nC
nC
–0.42
–1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDN306P Rev D W)




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: Fairchild Semiconductor

( fairchild )

FDN306P mosfet

데이터시트 다운로드
:

[ FDN306P.PDF ]

[ FDN306P 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


FDN306P

P-Channel 1.8V Specified PowerTrench MOSFET - Fairchild Semiconductor