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Fairchild Semiconductor |
February 2001
FDG6306P
P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications wtih a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Battery management
• Load switch
Features
• –0.6 A, –20 V. RDS(ON) = 420 mΩ @ VGS = –4.5 V
RDS(ON) = 630 mΩ @ VGS = –2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
S
G
D
S 1 or 4
Pin 1
D
G
S
G 2 or 5
D 3 or 6
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
6 or 3 D
5 or 2 G
4 or 1 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.06
FDG6306P
7’’
Ratings
–20
± 12
–0.6
–2.0
0.3
–55 to +150
415
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDG6306P Rev C(W)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown
Voltage
VGS = 0 V, ID = –250 µA
–20
∆BV DSS
∆TJ
Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C
Coefficient
–14
IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V
IGSSF
Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V
IGSSR
Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
∆V GS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
–0.6 –1.2
3
VGS = –4.5 V, ID = –0.6 A
VGS = –2.5 V, ID = –0.5 A
VGS = –4.5 V, ID = –0.6 A, TJ=125°C
VGS = –4.5 V, VDS = –5 V
VDS = –5 V, ID = –0.6 A
–2
300
470
400
1.8
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz
114
24
9
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –10 V, ID = 1 A,
VGS = –4.5 V, RGEN = 6 Ω
VDS = –10 V, ID = –0.6 A,
VGS = –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –0.25 A(Note 2)
Voltage
5.5
14
6
1.7
1.4
0.3
0.4
–0.77
–1
–100
100
–1.5
420
630
700
11
25
12
3.4
2.0
–0.25
–1.2
V
mV/°C
µA
nA
nA
V
mV/°C
MΩ
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad .
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG6306P Rev C (W)
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