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Fairchild Semiconductor |
December 2001
FDG330P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
Features
• –2 A, –12 V.
RDS(ON) = 110 mΩ @ VGS = –4.5 V
RDS(ON) = 150 mΩ @ VGS = –2.5 V
RDS(ON) = 215 mΩ @ VGS = –1.8 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
S
D
D
Pin 1
SC70-6
G
D
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.30
FDG330P
7’’
16
25
34
Ratings
–12
±8
–2
–6
0.75
0.48
–55 to +150
260
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDG330P Rev D (W)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –10 V,
VGS = 8 V,
VGS = –8 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –2.0 A
VGS = –2.5 V, ID = –1.7 A
VGS = –1.8 V, ID = –1.4 A
VGS = –4.5 V, ID = –2.0 A, TJ = 125°C
VGS = –4.5 V, VDS = –5 V
VDS = –5 V, ID = –2.0 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –6.0 V, V GS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –6.0 V, ID = 1 A,
VGS = –4.5 V, RGEN = 6 Ω
VDS = –6.0 V, ID = –2.0 A,
VGS = –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –0.62 A (Note 2)
–12
–0.4
–6
V
–2.7 mV/°C
–1
100
–100
µA
nA
nA
–0.7 –1.5
V
2.3 mV/°C
84 110
107 150
145 215
98 148
6.8
mΩ
A
S
477 pF
186 pF
124 pF
10 20
11 20
12 22
18 32
57
0.8
1.4
ns
ns
ns
ns
nC
nC
nC
–0.62
–0.7 –1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a.) 170°C/W when mounted on a 1 in2 pad of 2 oz. copper.
b.) 260°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG330P Rev D (W)
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