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PDF FDD6688 Data sheet ( Hoja de datos )
| Número de pieza | FDD6688 | |
| Descripción | 30V N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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June 2004
FDD6688/FDU6688
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
Applications
• DC/DC converter
• Motor Drives
Features
• 84 A, 30 V.
RDS(ON) = 5 mΩ @ VGS = 10 V
RDS(ON) = 6 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbo
l
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
Ratings
30
±20
84
100
83
3.8
1.6
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FDD6688
FDD6688
D-PAK (TO-252)
13’’
FDU6688
FDU6688
I-PAK (TO-251)
Tube
Tape width
12mm
N/A
Units
V
A
W
°C
°C/W
Quantity
2500 units
75
©2004 Fairchild Semiconductor Corporation
FDD6688/FDU6688 Rev F(W)
1 page  
Typical Characteristics
10
ID =18A
8
VDS = 10V
15V
20V
6
4
2
0
0 20 40 60 80
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
1000
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1 RθJA = 96oC/W
TC = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area
5000
4000
3000
CISS
f = 1MHz
VGS = 0 V
2000
1000
CRSS
0
0
COSS
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics
100
80
60
40
20
0
0.01
0.1
SINGLE PULSE
RθJA = 96°C/W
TC = 25°C
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
SINGLE PULSE
0.0001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJAt) = r(t) * RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6688/FDU6688 Rev F(W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDD6688.PDF ] | |
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