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FDD6680 반도체 회로 부품 판매점

N-Channel Logic Level PWM Optimized PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDD6680 데이터시트, 핀배열, 회로
November 2004
FDD6680 / FDU6680
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Motor Drives
Features
46 A, 30 V
RDS(ON) = 10 m@ VGS = 10 V
RDS(ON) = 15 m@ VGS = 4.5 V
Low gate charge
Fast Switching Speed
High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
±20
46
12
100
56
3.3
1.5
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA
(Note 1)
(Note 1a)
(Note 1b)
2.7
45
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6680
FDD6680
D-PAK (TO-252)
FDU6680
FDU6680
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
75
©2004 Fairchild Semiconductor Corporation
FDD6680/FDU6680 Rev. C1(W)


FDD6680 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 25 V, ID= 12A
IAS Drain-Source Avalanche Current
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 12 A,TJ=125°C
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 12 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15V,
VGS = 5 V
ID = 12 A,
Min Typ Max Units
180 mJ
12 A
30
24
V
mV/°C
1
±100
µA
nA
1 1.9 3
V
–5 mV/°C
7.7
9.9
11.4
50
47
10
15
16
m
A
S
1230
325
150
1.5
pF
pF
pF
10 19
7 13
29 46
12 21
13 18
3.5
5.1
ns
ns
ns
ns
nC
nC
nC
FDD6680/FDU6680 Rev. C1(W)




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FDD6680 mosfet

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