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Fairchild Semiconductor |
February 2000
FDD6670A
N-Channel, Logic Level, PowerTrench MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
• DC/DC converter
• Motor drives
Features
• 66 A, 30 V. RDS(on) = 0.008 Ω @ VGS = 10 V
RDS(on) = 0.010 Ω @ VGS = 4.5 V.
• Low gate charge (35nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low RDS(on).
D
D
G
S
TO-252
Absolute Maximum Ratings TC=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
TA = 25oC (Note 1a)
Maximum Drain Current -Pulsed
Maximum Power Dissipation
TC = 25oC
TA = 25oC
TA = 25oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
G
S
Ratings
30
±20
66
15
100
70
3.2
1.3
-55 to +150
1.8
40
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6670A
FDD6670A
13’’
2000 Fairchild Semiconductor Corporation
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500
FDD6670A, Rev. C
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche ratings (Note 2)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V, ID = 66 A
IAR Maximum Drain-Source Avalanche Current
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
∆BVDSS
∆TJ
Breakdown Voltage
Temperature Coefficient
IDSS Zero Gate Voltage Drain
Current
IGSSF
Gate-Body Leakage Current,
Forward
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20 V, VDS = 0 V
30
400 mJ
66 A
V
25 mV/°C
1 µA
100 nA
-100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 15 A
VGS = 10 V, ID = 15 A,TJ=125°C
VGS = 4.5 V, ID =13 A
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 12 A
1 1.6 3
V
-4 mV/°C
0.0065 0.008
0.0090 0.013
0.0085 0.010
50
55
Ω
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
3200
820
400
pF
pF
pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDS = 15 V, ID = 15 A,
VGS = 5 V,
15 27 ns
15 27 ns
85 105 ns
42 68 ns
35 50 nC
9 nC
16 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
2.3
VSD Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A (Note 2)
Voltage
0.72 1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
A
V
a) RθJA= 40oC/W when mounted
on a 1in2 pad of 2oz copper.
b) RθJA= 96oC/W when mounted
on a minimum pad .
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDD6670A, Rev. C
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