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FDD6630A 반도체 회로 부품 판매점

N-Channel PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDD6630A 데이터시트, 핀배열, 회로
FDD6630A
N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
Applications
• DC/DC converter
• Motor drives
July 1999
ADVANCE INFORMATION
Features
• 21 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V
RDS(ON) = 0.050 @ VGS = 4.5 V.
• Low gate charge.
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON).
D
G
S
TO-252
D
G
S
Absolute M aximum Ratings TC=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
(Note 1a)
PD
TJ, Tstg
Maximum Drain Current -Pulsed
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
TA = 25oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1a)
(Note 1b)
Ratings
30
±20
21
7.6
100
28
3.2
1.3
-55 to +150
4.5
40
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6630A
FDD6630A
13’’
1999 Fairchild Semiconductor Corporation
Tape Width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500
FDD6630A Rev. A


FDD6630A 데이터시트, 핀배열, 회로
Electrical Characteristics TC=25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
30
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
1
IGSSF
Gate-Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
IGSSR
Gate-Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
ON CHARACTERISTICS (Note 2)
VGS(TH) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1
3
RDS(ON)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 7.6 A
VGS = 4.5 V, ID = 6.3 A
0.035
0.050
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
VGS = 0 V, IS = 2.7 A
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJC has been used to determine some maximum ratings.
21
1.2
V
µA
nA
nA
V
A
V
a) RθJA= 40oC/W when mounted on a
1 in2 pad of 2oz copper.
b) RθJA= 96oC/W when mounted on
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD6630A Rev. A




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FDD6630A mosfet

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FDD6630A

N-Channel PowerTrench MOSFET - Fairchild Semiconductor