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FDD6612 반도체 회로 부품 판매점

N-Channel/ Logic Level/ PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDD6612 데이터시트, 핀배열, 회로
February 2004
FDD6612A/FDU6612A
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
DC/DC converter
Motor Drives
Features
30 A, 30 V
RDS(ON) = 20 m@ VGS = 10 V
RDS(ON) = 28 m@ VGS = 4.5 V
Low gate charge
Fast Switching
High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
@TA=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
PD
TJ, TSTG
Power Dissipation
@TC=25°C
(Note 1)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
±20
30
9.5
60
36
2.8
1.3
–55 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6612A
FDD6612A
D-PAK (TO-252)
FDU6612A
FDU6612A
I-PAK (TO-251)
Reel Size
13’’
Tube
3.9
45
96
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
75
©2004 Fairchild Semiconductor Corporation
FDD6612A/FDU6612A Rev E(W)


FDD6612 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 27 V, ID=10 A
IAR Drain-Source Avalanche Current
51 mJ
10 A
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
30
25
V
mV/°C
1
±100
µA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
1 2.0
–5.1
VGS = 10 V,
VGS = 4.5 V,
VGS = 10 V,
VDS = 5 V,
ID = 9.5 A
ID = 8 A
ID = 9.5 A, TJ=125°C
ID = 9.5 A
15
20
23
28
3V
mV/°C
20 m
28
33
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 Mv, f = 1.0 MHz
660 pF
170 pF
90 pF
2.3
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15 V, ID = 9.5 A,
VGS = 5 V
9 18
5 10
24 38
48
6.7 9.4
2.1
2.7
ns
ns
ns
ns
nC
nC
nC
FDD6612A/FDU6612A Rev. E(W)




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FDD6612 mosfet

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