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FDD6296 반도체 회로 부품 판매점

30V N-Channel Fast Switching PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDD6296 데이터시트, 핀배열, 회로
June 2004
FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
DC/DC converter
Power management
Features
50A, 30 V
RDS(ON) = 8.8 m@ VGS = 10 V
RDS(ON) = 11.3 m@ VGS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
± 20
50
15
100
52
3.8
1.6
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.9
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FDD6296
FDD6296
D-PAK (TO-252)
13’’
FDU6296
FDU2696
I-PAK (TO-251)
Tube
Tape width
12mm
N/A
Units
V
A
W
°C
°C/W
Quantity
2500 units
75
©2004 Fairchild Semiconductor Corporation
FDD6296/FDU6296 Rev C(W)


FDD6296 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=15A
IAS Drain-Source Avalanche Current
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
VGS = 0 V,
ID = 250 µA
BVDSS
TJ
IDSS
Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
IGSS Gate–Body Leakage
VGS =± 20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
gFS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 13 A
VGS = 10 V, ID = 15 A, TJ=125°C
VDS = 5 V,
ID = 15 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Crss Reverse Transfer Capacitance
RG Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate–Source Charge
VDS = 15V, ID = 15 A, VGS = 10 V
VDS = 15V,
VGS = 5 V
ID = 15 A,
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.2 A (Note 2)
trr Diode Reverse Recovery Time IF = 15 A,
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs
Min Typ Max Units
165 mJ
15 A
30
29
V
mV/°C
1 µA
±
100
nA
1 1.7 3
V
–0.5 mV/°C
7.5 8.8
9.0 11.3
9.3 15.0
58
m
S
1440
400
140
1.3
pF
pF
pF
11
6
29
13
22.5
12.2
4
3.5
19
11
46
23
31.5
17
ns
ns
ns
ns
nC
nC
nC
nC
0.74
25
13
3.2
1.2
A
V
nS
nC
FDD6296/FDU6296 Rev. C(W)




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FDD6296 mosfet

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FDD6296

30V N-Channel Fast Switching PowerTrench MOSFET - Fairchild Semiconductor