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FDD6035AL 반도체 회로 부품 판매점

N-Channel/ Logic Level/ PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDD6035AL 데이터시트, 핀배열, 회로
September 2001
FDD6035AL
N-Channel, Logic Level, PowerTrenchMOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
DC/DC converter
Motor drives
Features
46 A, 30 V. RDS(ON) = 0.0125 @ VGS = 10 V
RDS(ON) = 0.016 @ VGS = 4.5 V.
Low gate charge (17nC typical).
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
D
D
G
S
TO-252
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1)
(Note 1a)
Drain Current - Pulsed
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
TA = 25oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
G
S
Ratings
30
±20
46
12
100
50
2.8
1.3
-55 to +150
2.5
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6035AL
FDD6035AL
13’’
Tape width
16mm
2001 Fairchild Semiconductor Corporation
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500
FDD6035AL, Rev. A


FDD6035AL 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source Avalanche VDD = 15 V, ID = 12 A
Energy
IAR Maximum Drain-Source Avalanche Current
180 mJ
12 A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to
25°C
VDS = 24 V, VGS = 0 V
30
25
V
mV/°C
1 µA
IGSSF
Gate-Body Leakage Current, Forward VGS = 20V, VDS = 0 V
100 nA
IGSSR
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
1 1.6
3
V
ID = 250 µA, Referenced to
25°C
-4
mV/°C
VGS = 10 V, ID = 12 A
.0009 0.0125
VGS = 10 V, ID = 12
A,TJ=125°C
.0015 0.019
.0120 0.016
VGS = 4.5 V, ID =10 A
VGS = 10 V, VDS = 5 V
50
A
VDS = 5 V, ID = 12 A
44 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
1700
340
140
pF
pF
pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 15 V, ID = 12 A,
VGS = 5 V,
10 18
ns
12 22
ns
35 56
ns
10 18
ns
17 23 nC
5 nC
6 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A(Note 2)
2.3
0.72 1.3
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
A
V
1a)inR2θpJAa=d4o5fo2Coz/Wcowppheern. mounted on a
b) RθJA= 96oC/W on a minimum
mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD6035AL, Rev. A




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FDD6035AL mosfet

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FDD6035AL

N-Channel/ Logic Level/ PowerTrench MOSFET - Fairchild Semiconductor