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FDD3706 반도체 회로 부품 판매점

20V N-Channel PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDD3706 데이터시트, 핀배열, 회로
April 2002
FDD3706/FDU3706
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
DC/DC converter
Motor Drives
Features
50 A, 20 V
RDS(ON) = 9 m@ VGS = 10 V
RDS(ON) = 11 m@ VGS = 4.5 V
RDS(ON) = 16 m@ VGS = 2.5 V
Low gate charge (16 nC)
Fast Switching
High performance trench technology for extremely
low RDS(ON)
D
G
DTO-P-A25K2
(TO-252)
GDS
I-PAK
(TO-251AA)
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
@TA=25°C
(Note 3)
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
@TA=25°C
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
20
± 12
50
14.7
60
44
3.8
1.6
-55 to +175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Package
FDD3706
FDD3706
D-PAK (TO-252)
FDU3706
FDU3706
I-PAK (TO-251)
Reel Size
13’’
Tube
3.4
45
96
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
75
©2002 Fairchild Semiconductor Corp.
FDD3706/FDU3706 Rev C (W)


FDD3706 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 10V, ID=7A
IAS Drain-Source Avalanche Current
60 mJ
7A
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V,
ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 16 V,
VGS = 12 V,
VGS = –12 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
20
13
V
mV/°C
1
100
–100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA,Referenced to 25°C
0.5 1
–3.5
1.5 V
mV/°C
VGS = 10 V, ID = 16.2 A
VGS = 4.5 V, ID = 14.7 A
VGS = 2.5 V, ID = 12.2 A
VGS = 4.5 V, ID = 14.7 A,TJ = 125°C
7.5 9
8 11
11 16
12.6 19
VGS = 4.5 V, VDS = 5 V
30
VDS = 5 V,
ID = 14.7 A
65
m
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
1882
430
201
pF
pF
pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6
VDS = 10V,
VGS = 4.5 V
ID = 14.7 A,
11 20
15 27
35 56
16 29
16 23
3.7
4
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
3.2 A
VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A (Note 2)
0.7 1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Scale 1 : 1 on letter size paper
3. Maximum current is calculated as:
PD
R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD3706/FDU3706 Rev C (W)




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FDD3706 mosfet

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FDD3706

20V N-Channel PowerTrench MOSFET - Fairchild Semiconductor