FDD3672 반도체 회로 부품 판매점
N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m
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 Fairchild Semiconductor |
June 2002
FDD3672
N-Channel UltraFET® Trench MOSFET
100V, 44A, 28mΩ
Features
• rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A
• Qg(tot) = 24nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection System
• 42V Automotive Load Control
Formerly developmental type 82760
• Electronic Valve Train System
GATE
DRAIN
(FLANGE)
SOURCE
TO-252AB
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
D
G
S
Ratings
100
±20
44
31
6.5
Figure 4
120
135
0.9
-55 to 175
1.11
100
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDD3672 Rev. A
Package Marking and Ordering Information
Device Marking
FDD3672
Device
FDD3672
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 80V
VGS = 0V
TC= 150oC
VGS = ±20V
100
-
-
-
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 44A, VGS = 10V
ID = 21A, VGS = 6V,
ID=44A, VGS=10V, TC=175oC
2
-
-
-
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V
ID = 44A
Ig = 1.0mA
-
-
-
-
-
-
-
-
Resistive Switching Characteristics (VGS = 10V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
VDD = 50V, ID = 44A
VGS = 10V, RGS = 11.0Ω
tf
tOFF
Fall Time
Turn-Off Time
-
-
-
-
-
-
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1: Starting TJ = 25°C, L = 0.6mH, IAS = 20A.
2: Pulse Width = 100s
ISD = 44A
ISD = 21A
ISD = 44A, dISD/dt =100A/µs
ISD = 44A, dISD/dt =100A/µs
-
-
-
-
Typ Max Units
- -V
-1
µA
- 250
- ±100 nA
-
0.024
0.031
0.054
4
0.028
0.047
0.068
V
Ω
1710
247
62
24
3
8.6
5.6
5.6
-
-
-
36
4.5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
- 104 ns
11 - ns
59 - ns
26 - ns
44 - ns
- 104 ns
- 1.25 V
- 1.0 V
- 52 ns
- 80 nC
©2002 Fairchild Semiconductor Corporation
FDD3672 Rev. A
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FDD3672 mosfet
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