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PDF FDC6327 Data sheet ( Hoja de datos )
| Número de pieza | FDC6327 | |
| Descripción | Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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July 2000
FDC6327C
Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These N & P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where
the bigger more expensive SO-8 and TSSOP-8 packages
are impractical.
Applications
• DC/DC converter
• Load switch
• Motor driving
Features
• N-Channel 2.7A, 20V. RDS(on) = 0.08Ω @ VGS = 4.5V
RDS(on) = 0.12Ω @ VGS = 2.5V
• P-Channel -1.6A, -20V.RDS(on) = 0.17Ω @ VGS = -4.5V
RDS(on)= 0.25Ω @ VGS = -2.5V
• Fast switching speed.
• Low gate charge.
• High performance trench technology for extremely
low RDS(ON).
• SuperSOTTM-6 package: small footprint (72% smaller
than SO-8); low profile (1mm thick).
D2
S1
D1
SuperSOT TM -6
G2
S2
G1
43
52
61
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
N-Channel P-Channel
20 -20
±8 ±8
2.7 -1.9
8 -8
0.96
0.9
0.7
-55 to +150
130
60
Units
V
V
A
W
°C
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.327
FDC6327C
7”
Tape Width
8mm
Quantity
3000
1999 Fairchild Semiconductor Corporation
FDC6327C, Rev. E
1 page  
Typical Characteristics: N-Channel (continued)
5
ID = 2.7A
4
3
VDS = 5V
10V
15V
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
500
400
300
200
100
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
4 8 12 16
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
10
RDS(ON) LIMIT
1
100µs
1ms
10ms
100ms
1s
DC
0.1
0.01
VGS = 4.5V
SINGLE PULSE
RθJA = 180oC/W
TA = 25oC
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
5
4
3
2
1
0
0.01
SINGLE PULSE
RθJA = 180oC/W
TA = 25oC
0.1 1 10 100
SINGLE PULSE TIME (SEC)
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
FDC6327C, Rev. E
5 Page 
SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SuperSOT -6 (FS PKG Code 31, 33)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0158
1998 Fairchild Semiconductor Corporation
September 1998, Rev. A
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet FDC6327.PDF ] | |
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